In semiconductor packaging, wafer‑level bonding and advanced manufacturing processes, homogeneity, low‑stress performance and ultra‑high cleanliness of packaging materials are core guarantees for chip reliability and yield. SIENOX planetary mixing‑defoaming machine adopts non‑contact revolution‑rotation mixing technology and nanoscale vacuum deaeration system. It delivers zero‑contamination and high‑consistency process assurance for high‑sensitive materials such as Epoxy Molding Compound (EMC), Die‑Attach Film (DAF) and photoresist, helping semiconductor manufacturing break through the bottleneck of micron‑level defect control.

SIENOX Planetary Mixing‑Defoaming Machine: High‑Precision Preparation Solution for Semiconductor Packaging Materials.jpg

Challenges

SIENOX Solutions

Value Improvement

Thermal stress caused by nano‑filler agglomeration

Revolution‑rotation centrifugal force field (0‑2000 rpm adjustable), realizes uniform dispersion of silica / diamond fillers (CV value＜3%), thermal conductivity fluctuation ≤±5%

Chip heat dissipation efficiency increased by 40%, packaging warpage reduced to 0.1 mm/m

Delamination failure induced by micro‑bubbles

Multi‑stage gradient vacuum deaeration, simultaneous mixing and deaeration, bubble size controlled＜5 μm, residual content＜50 ppm

Interfacial bonding strength reaches 150 MPa, packaging yield＞99.9%

Risk of metallic ion contamination

Non‑contact design, materials only contact ceramic / PTFE containers, certified cleanliness under quality management system, metallic impurities＜0.1 ppb

Meet purity requirements for advanced processes below 28 nm

High‑precision temperature control requirement

Temperature control system inhibits resin pre‑curing, process window extended to 8 hours

Curing shrinkage＜0.02%, wafer‑dicing chipping rate reduced by 80%

Semiconductor Scenario‑Based Application Cases

Flip‑Chip Underfill Adhesive

SIENOX equipment realizes loss‑free dispersion of nano‑silica slurry with filler distribution uniformity up to 99.2%. Combined with vacuum deaeration, colloid fluidity increases by 30% and filling time is shortened to 3 seconds. Applied in 5G millimeter‑wave chip packaging with void rate＜0.001%.

Wafer‑Level Packaging (WLP) Photoresist

For thick‑film photoresist (SU‑8 series), SIENOX customized low‑shear mixing mode eliminates micro‑bubbles under vacuum. Film‑thickness uniformity (3 μm@100 μm) reaches ±1.5%. Adopted in TSV through‑silicon‑via process, via yield rises to 99.5%.

High‑Thermal‑Conductivity Thermal Interface Material (TIM)

With SIENOX planetary mixing technology, composite slurry of boron nitride / silver nanowires achieves thermal conductivity over 25 W/m·K and resistivity＜1×10⁻⁵ Ω·cm. Used for GPU chip heat dissipation, junction temperature drops by 18 ℃ and performance stability improves by 45%.

Core Advantages of SIENOX Semiconductor Solutions

Sub‑micron‑level defect control: Intelligent control system monitors material status in real‑time and automatically corrects mixing parameters;

Ultra‑clean process chain: Fully‑closed inert‑gas protection module with oxygen content＜10 ppm, suitable for BGA solder paste preparation

Full‑process controllability: Supports MES system docking to realize digital closed‑loop of formula management‑production‑quality inspection.